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BIDW20N60T

BIDW20N60T Insulated Gate Bipolar Transistor (IGBT)

GeneralInformation TheBourns?ModelBIDW20N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Electronic Solutions

伯恩斯

BIDW20N60T

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導體產品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 20A TRENCH TO-247N

Bourns Inc.

Bourns Inc.

Bourns Inc.

BRA20N60

N-CHANNELMOSFETinaTO-262PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

BRF20N60

N-CHANNELMOSFETinaTO-220FLPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

DAM20N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FCA20N60

600VN-ChannelMOSFET

Description SuperFET?is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCA20N60F

600VN-CHANNELFRFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60F

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCA20N60FS

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60S

600VN-ChannelMOSFET

Description SuperFET?is,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,provi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60S

PowerFactorCorrectionConverterDesign

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60S

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FCA20N60S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FCB20N60

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

產品屬性

  • 產品編號：

    BIDW20N60T

  • 制造商：

    Bourns Inc.

  • 類別：

    分立半導體產品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    溝槽型場截止

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.4V @ 15V，20A

  • 開關能量：

    1mJ（開）， 300μJ（關）

  • 輸入類型：

    標準

  • 25°C 時 Td（開/關）值：

    19ns/48ns

  • 測試條件：

    400V，20A，10 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應商器件封裝：

    TO-247

  • 描述：

    IGBT 600V 20A TRENCH TO-247N

供應商型號品牌批號封裝庫存備注價格
Microchip/微芯
30000
原裝正品,現(xiàn)貨優(yōu)勢
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
Bourns Inc.
24+
TO-247-3
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
BOURNS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
BEREX
22+
SOT-89
20000
保證原裝正品,假一陪十
 詢價
BEREX
22+
SOT-89
100000
代理渠道/只做原裝/可含稅
 詢價
BEREX
23+
SOT-89
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
BEREX
23+
SOT-89
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
BEREX
SOT-89
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
BEREX
23+
SOT-89
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多BIDW20N60T供應商 更新時間2024-12-22 14:00:00

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