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CA3252

QuadGatedNon-InvertingPowerDriver

Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput

Intersil

Intersil Corporation

CA3252E

QuadGatedNon-InvertingPowerDriver

Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput

Intersil

Intersil Corporation

CA3252M

QuadGatedNon-InvertingPowerDriver

Description TheCA3252isusedtointerfacelow-levellogictohighcurrentloads.EachPowerDriverhasfourinvertingswitchesconsistingofaninvertinglogicinputstageandaninvertinglow-sidedriveroutputstage.Allinputsare5VTTL/CMOSlogiccompatibleandhaveacommonEnableinput

Intersil

Intersil Corporation

CEA3252

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEA3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,5A,RDS(ON)=32m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronousRectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=29mΩ@VGS=10V. RDS(ON)=36mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■Surfacemount

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3252

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CHM3252JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT7.5Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi

CHENMKOchenmko

力勤股份有限公司

CHM3252PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT25Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CPH3252

NPNEpitaxialPlanarSiliconTransistorHigh-VoltageSwitchingApplications

Features ?AdoptionofFBET,MBITprocesses. ?Largecurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?High-speedswitching. ?Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight:0.9mm). ?Highallowablepowerdissipation. Applications ?DC

SANYOSanyo

三洋三洋電機株式會社

CXA3252N

AllBandTVTunerICwithOn-chipPLL

Description TheCXA3252NisamonolithicTVtunerICwhichintegrateslocaloscillatorandmixercircuitsforVHFband,localoscillatorandmixercircuitsforUHFband,anIFamplifierandatuningPLLontoasinglechip,enablingfurtherminiaturizationofthetuner. Features ?Superiorcross

SonySONY

索尼索 尼

DS3252

Single/Dual/Triple/QuadDS3/E3/STS-1LIUs

GENERALDESCRIPTION TheDS3251(single),DS3252(dual),DS3253(triple),andDS3254(quad)lineinterfaceunits(LIUs)performthefunctionsnecessaryforinterfacingatthephysicallayertoDS3,E3,orSTS-1lines.EachLIUhasindependentreceiveandtransmitpathsandabuilt-injitterattenu

Dallas

Dallas Semiconductor

DS3252

Single/Dual/Triple/QuadDS3/E3/STS-1LIUs

MaximMaxim Integrated Products

美信美信半導(dǎo)體

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37440
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2018+
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30000
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21+
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12588
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6852
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23+
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10000
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24+
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21000
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21+
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35400
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2021+
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100500
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8000
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50000
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更多BIT3252DIC供應(yīng)商 更新時間2024-11-16 8:50:00

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