BLA6H0912-500分立半導體產品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Features and benefits

■ Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply

voltage of 50 V, an IDq of 100 mA, a tp of 128 μs with δ of 10 :

◆ Output power = 450 W

◆ Power gain = 17 dB

◆ Efficiency = 50

■ Easy power control

■ Integrated ESD protection

■ High flexibility with respect to pulse formats

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (960 MHz to 1215 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ A-band power amplifiers for radar applications in the 960 MHz to 1215 MHz frequency

range