| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BLF1 | Axial Lead and Cartridge Fuses - Midget | Littelfuselittelfuse 力特力特公司 | Littelfuse | |
Axial Lead and Cartridge Fuses AxialLeadandCartridgeFuses LaminatedBodyFast-ActingTypeBLFSeries FibreBodyFast-ActingTypeBLNSeries | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangelesspackage(SOT538A)withaceramiccap.Thecommonsourceisconnectedtothemountingbase. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonmountingb | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangepackage(SOT467C)withaceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonundersideel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangepackage(SOT541A)withaceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonundersideel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOStransistorencapsulatedina2-leadflangepackage(SOT502A)withaceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?Sourceonundersideel | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Base station LDMOS transistor DESCRIPTION 125WLDMOSpowertransistorforbasestation applicationsatfrequenciesfrom800MHzto1000MHz. FEATURES ?Typicalperformanceatasupplyvoltageof27V: –1-toneCW;IDQ=1000mA –Outputpower=125W –Gain=16.5dB –Efficiency=54 –EDGEoutpu | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorfortransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness(VSWR?40:1throughallphase | AmpleonAmpleon USA Inc. 安譜隆 | Ampleon | ||
Power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorfortransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits ?Excellentruggedness(VSWR?40:1throughallphase | AmpleonAmpleon USA Inc. 安譜隆 | Ampleon | ||
Power LDMOS transistor Generaldescription 750WLDMOSpowertransistorinSOT539pushpullpackageforacceleratorapplications atafrequencyof1.3GHz. Featuresandbenefits ?Highefficiency ?Excellentruggedness ?Excellentthermalstability ?Easypowercontrol ?IntegrateddualsidedESDprotectionenab | AmpleonAmpleon USA Inc. 安譜隆 | Ampleon | ||
Power LDMOS transistor Generaldescription 750WLDMOSpowertransistorinSOT539pushpullpackageforacceleratorapplications atafrequencyof1.3GHz. Featuresandbenefits ?Highefficiency ?Excellentruggedness ?Excellentthermalstability ?Easypowercontrol ?IntegrateddualsidedESDprotectionenab | AmpleonAmpleon USA Inc. 安譜隆 | Ampleon | ||
HF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforSSBtransmitterapplicationsintheHFfrequencyrange.Thetransistorisencapsulatedina4-lead,SOT123flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange.Matchedgate-sourcevoltage | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
VHF POWER MOSFET DESCRIPTION: TheASIBLF145isDesignedforGeneralPurposeClassABPowerAmplifierApplicationsupto175MHz. FEATURES: ?PG=20dBTyp.at30W/28MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
HF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforSSBtransmitterapplicationsintheHFfrequencyrange.Thetransistorisencapsulatedina4-lead,SOT123Aflangepackage,withaceramiccap.Allleadsareisolatedfromtheflange. Matchedgate-sourcevoltag | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
N-Channel Enhancement Mode DESCRIPTION: TheASIBLF145isDesignedforGeneralPurposeClassABPowerAmplifierApplicationsupto175MHz. FEATURES: ?PG=20dBTyp.at30W/28MHz ?Omnigold?MetalizationSystem ??????? | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
VHF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistordesignedforindustrialandmilitaryapplicationsintheHF/VHFfrequencyrange. Thetransistorisencapsulatedina4-lead,SOT121flangeenvelope,withaceramiccap.Allleadsareisolatedfromtheflange. Amarkingcod | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
VHF power MOS transistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistorencapsulatedina4-lead,SOT121Bflangepackagewithaceramiccap.Allleadsareisolatedfromtheflange.Amarkingcode,showinggate-sourcevoltage(VGS)informationisprovidedformatchedpairapplications.Refertot | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp |
詳細(xì)參數(shù)
- 型號(hào)：
BLF1
- 制造商：
LITTELFUSE
- 制造商全稱(chēng)：
Littelfuse
- 功能描述：
Axial Lead and Cartridge Fuses - Midget
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LITTELFUSE |
23+ |
NA |
25060 |
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣 |
詢(xún)價(jià) | ||
NXP |
1430+ |
原裝正品 |
5800 |
全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品 |
詢(xún)價(jià) | ||
HIGHEND |
60 |
AP3 |
60 |
詢(xún)價(jià) | |||
NXP |
PHI |
250 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢(xún)價(jià) | |||
NXP |
2020+ |
20 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | |||
24+ |
800 |
詢(xún)價(jià) | |||||
PHILIPS |
16+ |
高頻管 |
600 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
PHILIPS |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢(xún)價(jià) | ||
NXP |
23+ |
SOT |
7635 |
全新原裝優(yōu)勢(shì) |
詢(xún)價(jià) | ||
原廠(chǎng) |
23+ |
專(zhuān)營(yíng)高頻管模塊 |
3562 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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