BLF6G22LS-130分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a

supply voltage of 28 V and an IDq of 1100 mA:

◆ Average output power = 30 W

◆ Power gain = 17 dB (typ)

◆ Efficiency = 28.5

◆ IMD3 = ?37 dBc

◆ ACPR = ?40 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (2000 MHz to 2200 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

■ RF power amplifiers W-CDMA base stations and multi carrier applications in the

2000 MHz to 2200 MHz frequency range