BLF6G38S-25分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

Features

■ Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA:

? Average output power = 4.5 W

? Power gain = 15 dB

? Drain efficiency = 24

? ACPR885k = ?45 dBc in 30 kHz bandwidth

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (3400 MHz to 3800 MHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range