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CEB16N10	文件：539.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB16N10	文件：615.27 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB16N10L	文件：634.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB16N10L	文件：651.25 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEC16N10L	文件：807.31 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED16N10	文件：353.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED16N10	文件：628.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED16N10L	文件：1.33831 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
CED16N10L	文件：690 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED16N10L	文件：491.95 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED16N10SL	文件：518.02 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP16N10	文件：615.27 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP16N10	文件：539.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP16N10L	文件：651.25 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP16N10L	文件：634.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU16N10	文件：353.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU16N10	文件：5.01082 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
CEU16N10	文件：628.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU16N10L	文件：690 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU16N10L	文件：5.01071 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市粵華信科技有限公司	BLM16N10	BELLING/上海貝嶺	24+	TO220/TO252	40000	一級(jí)代理-原裝現(xiàn)貨/支持實(shí)單	詢價(jià)
深圳市星辰微電科技有限公司	BLM16N10	上海貝嶺	22+	TO220 TO252	150000	上海貝嶺全系列在售,優(yōu)勢(shì)渠道	詢價(jià)
深圳市芯皇電子有限公司	BLM16N10	上海貝嶺	23+	TO220 TO252	100000	原裝正品假一罰十,代理渠道價(jià)格優(yōu)	詢價(jià)
深圳市順鑫晟科技有限公司	BLM16N10	BELLING/上海貝嶺	24+	TO220 TO252	820000	全新原廠原裝正品支持實(shí)單	詢價(jià)
深圳市維爾達(dá)電子有限公司	BLM184AG102SN1D	BL	2023+		80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	BLM184AG102SN1D	BL	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	BLM184AG102SN1D	BL	23+	原廠正規(guī)渠道	5000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市華來深電子有限公司	BLM187BB050SN1D	MURATA	23+	SMD	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市拓億芯電子有限公司	BLM187BB050SN1D	MURATA	23+	SMD	30000	代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	BLM187BB050SN1D	MURATA	21+	SMD	4000	原裝現(xiàn)貨假一賠十	詢價(jià)

更多BLM16N10供應(yīng)商更新時(shí)間2025-1-16 14:02:00

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