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CEB16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEC16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED16N10L

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CED16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
上海貝嶺
22+
TO220 TO252
150000
上海貝嶺全系列在售,優(yōu)勢(shì)渠道
 詢價(jià)
上海貝嶺
23+
TO220 TO252
100000
原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
BELLING/上海貝嶺
25+
TO220 TO252
820000
全新原廠原裝正品支持實(shí)單
 詢價(jià)
BL
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
BL
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
MURATA
23+
SMD
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
MURATA
23+
SMD
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
MURATA
21+
SMD
4000
原裝現(xiàn)貨假一賠十
 詢價(jià)
MURATA
05+
SMD
4000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
MURATA
24+
SMD
5000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
更多BLM16N10供應(yīng)商 更新時(shí)間2025-3-12 18:39:00

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