BLM8D1822S-50PB分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

BLM8D1822S-50PB屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLM8D1822S-50PB晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC

solution using Ampleon’s state of the art GEN8 LDMOS technology. The carrier and

peaking device, input splitter and output combiner are integrated in a single package. This

multiband device is perfectly suited as general purpose driver or small cell final in the

frequency range from 1805 MHz to 2170 MHz. Available in gull wing or flat lead outline.

Features and benefits

? Integrated input splitter

? Integrated output combiner

? High efficiency

? Designed for broadband operation (frequency 1805 MHz to 2170 MHz)

? High section-to-section isolation enabling multiple combinations

? Integrated temperature compensated bias

? Independent control of carrier and peaking bias

? Integrated ESD protection

? Excellent thermal stability

? Source impedance 50 ?; high power gain

? For RoHS compliance see the product details on the Ampleon website

Applications

? RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are

the following as also depicted in Section 8.1:

? Dual section or single ended

? Quadrature combined

? Push-pull