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BLS6G2731-120

LDMOS S-band radar power transistor

Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ■TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100μswithδof10: ?Outputpower=120W

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLS6G2731-120

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLS6G2731-120

LDMOS S-band radar power transistor

Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ?TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100?swith?of10: ?Outputpower=120W ?Powe

AmpleonAmpleon USA Inc.

安譜隆

BLS6G2731-6G

LDMOS S-Band radar power transistor

Generaldescription 6WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Featuresandbenefits ■TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltage of32V,anIDqof25mA,atpof100μsandaδof10: ◆Output

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLS6G2731-6G

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLS6G2731S-120

LDMOS S-band radar power transistor

Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ■TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100μswithδof10: ?Outputpower=120W

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLS6G2731S-120

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLS6G2731S-120

LDMOS S-band radar power transistor

Generaldescription 120WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHzrange. Features ?TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltageof32V,anIDqof100mA,atpof100?swith?of10: ?Outputpower=120W ?Powe

AmpleonAmpleon USA Inc.

安譜隆

BLS6G2731S-130

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BLS6G2731S-130

LDMOS S-band radar power transistor

Generaldescription 130WLDMOSpowertransistorintendedforradarapplicationsinthe2.7GHzto3.1GHz range. Featuresandbenefits ?TypicalpulsedRFperformanceatafrequencyof2.7GHzto3.1GHz,asupplyvoltage of32V,anIDqof100mA,atpof300μswithδof10: ?Outputpow

AmpleonAmpleon USA Inc.

安譜隆

詳細(xì)參數(shù)

  • 型號(hào)：

    BLS

  • 制造商：

    LITTELFUSE

  • 制造商全稱：

    Littelfuse

  • 功能描述：

    Axial Lead and Cartridge Fuses

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MAXIM/美信
16+
QFN
13982
只做原廠原裝,認(rèn)準(zhǔn)寶芯創(chuàng)配單專家
 詢價(jià)
MAXIM/美信
1902+
QFN
2734
代理品牌
 詢價(jià)
ITT
06+
原廠原裝
10051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
PHILIPS
23+
高頻管
155
專營(yíng)高頻管模塊,全新原裝!
 詢價(jià)
NXP
24+
6
詢價(jià)
Kingbrighf
24+
10MMScrewBas
50000
原裝現(xiàn)貨假一罰十
 詢價(jià)
N/A
23+
SOP-8
1075
全新原裝現(xiàn)貨
 詢價(jià)
BRIGHT
24+/25+
700
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
ITT
24+
BLS502
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢價(jià)
NXP
24+
SMD
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
更多BLS供應(yīng)商 更新時(shí)間2025-4-6 10:30:00

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