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IRFB9N60

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFB9N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB9N60A

IRPLLNR5WideRangeInputLinearFluorescentBallast

IRF

International Rectifier

IRFB9N60A

Switchmodepowersupply

VishayVishay Siliconix

威世科技威世科技半導體

IRFB9N60A

PowerMOSFET(Vdss=600V,Rds(on)=0.75ohm,Id=9.2A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRF

International Rectifier

IRFB9N60APBF

HEXFETPowerMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowersw

IRF

International Rectifier

IRFS9N60A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.75?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS9N60A

PowerMOSFET

FEATURES ?LowGateChargeQgresultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?Uninterruptib

VishayVishay Siliconix

威世科技威世科技半導體

IRFS9N60A

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?HighSpeedPowerSw

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    BLV9N60

  • 制造商：

    ESTEK

  • 制造商全稱：

    ESTEK

  • 功能描述：

    N-channel Enhancement Mode Power MOSFET

供應商型號品牌批號封裝庫存備注價格
ESTEK
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
STEK
24+
TO-220F
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
BLV
23+
TO220
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
BL
0733+
TO-220F
95
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
BLV
23+
TO220
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
BLV
23+
TO220
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
BL
20+
TO-220F
95
進口原裝現(xiàn)貨,假一賠十
 詢價
BL
21+
TO-220F
95
原裝現(xiàn)貨假一賠十
 詢價
24+
N/A
47000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
NSC
23+
121
詢價
更多BLV9N60供應商 更新時間2025-4-25 17:24:00

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