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IRFSL9N60A

SMPSMOSFET

IRF

International Rectifier

IRFSL9N60A

PowerMOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamic dV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSDirective200

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60A

PowerMOSFETs

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdv/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MDF9N60

N-ChannelMOSFET600V,9A,0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDF9N60B

N-ChannelMOSFET600V,9A,0.80(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF9N60BTH

N-ChannelMOSFET600V,9A,0.80(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF9N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDF9N60TH

N-ChannelMOSFET600V,9A,0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDF9N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BLV9N60

  • 制造商：

    ESTEK

  • 制造商全稱(chēng)：

    ESTEK

  • 功能描述：

    N-channel Enhancement Mode Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ESTEK
23+
NA
39960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
 詢(xún)價(jià)
STEK
24+
TO-220F
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
BLV
23+
TO220
10000
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
BL
0733+
TO-220F
95
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
BLV
23+
TO220
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
BLV
23+
TO220
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
BL
20+
TO-220F
95
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢(xún)價(jià)
BL
21+
TO-220F
95
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
24+
N/A
47000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
NSC
23+
121
詢(xún)價(jià)
更多BLV9N60供應(yīng)商 更新時(shí)間2025-4-25 17:24:00

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