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IRFSL9N60A

Power MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamic dV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSDirective200

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60A

Power MOSFETs

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdv/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60A

SMPS MOSFET

IRF

International Rectifier

IRFSL9N60A_V01

Power MOSFETs

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdv/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFSL9N60APBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MDF9N60

N-ChannelMOSFET600V,9A,0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDF9N60B

N-ChannelMOSFET600V,9A,0.80(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF9N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF9N60BTH

N-ChannelMOSFET600V,9A,0.80(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF9N60TH

N-ChannelMOSFET600V,9A,0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFSL9N60A

  • 功能描述：

    MOSFET N-Chan 600V 9.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IR
TO-220
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
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IR
24+
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161069
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IR
24+
TO-262
501167
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IR
2015+
TO-262
12500
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IR
23+
TO-262
7600
全新原裝現(xiàn)貨
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IR
24+
TO-262
8866
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IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IR
2022+
11
全新原裝 貨期兩周
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IR
2023+
TO-220
80000
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IR
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16800
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更多IRFSL9N60A供應(yīng)商 更新時(shí)間2025-1-25 14:00:00

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