零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFZ44 | N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
IRFZ44 | Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | |
IRFZ44 | N-CHANNEL POWER MOSFETS
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
IRFZ44 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFZ44 | Power MOSFET FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFZ44 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFZ44 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFZ44 | Advanced Power MOSFET | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
IRFZ44 | 45 Ampere Typical N-Channel Trench Power MOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | |
IRFZ44 | N-CHANNEL POWER MOSFETS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
IRFZ44 | 45 Ampere Typical N-Channel Trench Power MOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | |
IRFZ44 | N-CHANNEL POWER MOSFETS | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | |
IRFZ44 | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | |
IRFZ44 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Power MOSFET FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
isc N-Channel MOSFET Transistor DESCRIPTION ?Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) VDSS=60V RDS(on)=0.023? ID=48A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesigntha | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
Advanced Process Technology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRFZ44
- 功能描述:
MOSFET N-Chan 60V 50 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
臺(tái)產(chǎn)大芯片 |
23+ |
TO-220 |
2000 |
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成 |
詢(xún)價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
SAMSUNG |
05+ |
原廠原裝 |
390 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
IR |
2015+ |
TO-220 |
19898 |
專(zhuān)業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
IR |
24+ |
TO-220 |
5000 |
詢(xún)價(jià) | |||
IR |
23+ |
TO-220 |
9526 |
詢(xún)價(jià) | |||
12+ |
TO-263 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢(xún)價(jià) | |||
IR |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
IR |
16+ |
原廠封裝 |
50 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-220 |
2560 |
絕對(duì)原裝!現(xiàn)貨熱賣(mài)! |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
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