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IRFZ44

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRFZ44

Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRFZ44

N-CHANNEL POWER MOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFZ44

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44

Advanced Power MOSFET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFZ44

45 Ampere Typical N-Channel Trench Power MOSFETs

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRFZ44

N-CHANNEL POWER MOSFETS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFZ44

45 Ampere Typical N-Channel Trench Power MOSFETs

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRFZ44

N-CHANNEL POWER MOSFETS

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFZ44

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

IRFZ44

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44_V02

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ44CN

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatingareasarecriticalandofferadditionalsafetymargina

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFZ44E

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

VDSS=60V RDS(on)=0.023? ID=48A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesigntha

IRF

International Rectifier

IRFZ44EL

Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFZ44ELPBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFZ44ELPBF

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFZ44

  • 功能描述:

    MOSFET N-Chan 60V 50 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
臺(tái)產(chǎn)大芯片
23+
TO-220
2000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
詢(xún)價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢(xún)價(jià)
SAMSUNG
05+
原廠原裝
390
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢(xún)價(jià)
IR
2015+
TO-220
19898
專(zhuān)業(yè)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
詢(xún)價(jià)
IR
24+
TO-220
5000
詢(xún)價(jià)
IR
23+
TO-220
9526
詢(xún)價(jià)
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢(xún)價(jià)
IR
23+
TO-220
5000
原裝正品,假一罰十
詢(xún)價(jià)
IR
16+
原廠封裝
50
原裝現(xiàn)貨假一罰十
詢(xún)價(jià)
IR
24+
TO-220
2560
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
詢(xún)價(jià)
更多IRFZ44供應(yīng)商 更新時(shí)間2024-12-22 11:22:00