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IRFU420APBF

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420APBF

HEXFET Power MOSFET ( VDSS = 500V , RDS(on) max = 3.0廓 , ID = 3.3A )

SMPSMOSFET Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCOSSspecified(SeeAN1001) Applications ?SwitchModePowerSupply(SMPS)

IRF

International Rectifier

IRFU420APBF

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420APbF

Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420APBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU420B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU420PBF

HEXFETPOWERMOSFET(VDSS=500V,RDS(on)=3.0廓,ID=2.4A)

IRF

International Rectifier

IRFU420PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420PBF

DynamicdV/dtRating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420PBF

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR420,SiHFR420) ?Straightlead(IRFU420,SiHFU420) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFY420

N-ChannelMOSFETinaHermeticallysealedTO257ABMetalPackage.

SEME-LAB

Seme LAB

IRFY420C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRGB420

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=7.5A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB420U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=7.5A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB420U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRGP420U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=7.5A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGP420U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFU420APBF

  • 功能描述：

    MOSFET N-Chan 500V 3.3 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
TO-251AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
INFINEON/英飛凌
22+
TO-251
4800
專營INFINEON/英飛凌全新原裝進口正品
 詢價
Infineon(英飛凌)
23+
TO-251
7845
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
VIS
23+
IPAK
20000
原裝正品,假一罰十
 詢價
VISHAY
23+
TO262
7750
全新原裝優(yōu)勢
 詢價
VISHAY
2020+
TO-251
6875
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
VISHAY
2020+
TO-251
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR/VISH
24+
65230
詢價
IR
21+
TO251
19000
只做正品原裝現(xiàn)貨
 詢價
更多IRFU420APBF供應(yīng)商 更新時間2025-1-8 18:11:00

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