首頁 >IRFU5305PBF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFU5305PBF | Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFU5305PBF | HEXFET? Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A ) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?PowerMOSFETsarewellknownfor,provid | IRF International Rectifier | IRF | |
IRFU5305PBF | Ultra Low On-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFU5305PBF | Ultra Low On-Resistance | IRF International Rectifier | IRF | |
IRFU5305PBF | Ultra Low On-Resistance | IRF International Rectifier | IRF | |
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighVoltageHighSpeedPowerSwitchApplication HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
HighVoltageHighSpeedPowerSwitchApplication HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
HighVoltageHighSpeedPowerSwitchApplication HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
HighVoltageHighSpeedPowerSwitchApplication HighVoltageHighSpeedPowerSwitchApplication ?Built-inFree-wheelingDiodemakesefficientantisaturationoperation ?SuitableforhalfbridgelightballastApplications ?NoneedtointerestanhFEvaluebecauseoflowvariablestorage-timespreadeventhoughcornerspiritproduct ?Low | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild |
詳細參數(shù)
- 型號:
IRFU5305PBF
- 功能描述:
MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-251 |
22000 |
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
2625 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
Infineon Technologies |
24+ |
IPAK(TO-251AA) |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-251 |
60000 |
進口原裝正品現(xiàn)貨熱賣 |
詢價 | ||
IR |
16+ |
TO-251 |
6260 |
全新原裝/深圳現(xiàn)貨庫2 |
詢價 | ||
INFINEON |
22+ |
TO-251 |
5000 |
原裝正品!!!優(yōu)勢庫存!0755-83210901 |
詢價 | ||
INFINEON |
21+ |
TO-251 |
15000 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
IR |
24+ |
TO-251 |
3000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-251 |
7590 |
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div> |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-251 |
11858 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 |
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