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BR100LLD

SiliconBi-directionalTriggerDevice

GENERALDESCRIPTION Siliconbidirectionaltriggerdeviceinaglassenvelopesuitableforsurfacemounting.Thedeviceisintendedforuseintriacandthyristortriggercircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BRH100

OverCurrentProtection(HiccupMode)

ARCH

Arch Electronics Corp.

BS100

My-Comprecisionswitches

IVOBaomeng Electronics (Shanghai) Co., Ltd

堡盟電子堡盟電子（上海）有限公司

BS100C

PHOTODIODEFORVISIBLELIGHT

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

BS100D

WideWavelengthBandTypePhotodiode

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

BSF-C100

BandStopFilter

MINI

Mini-Circuits

BSF-C100+

BandStopFilter

MINI

Mini-Circuits

BSP100

N-channelenhancementmodeTrenchMOStransistor

VDSS=30V ID=6A RDS(ON)≤100m?(VGS=10V) RDS(ON)≤200m?(VGS=4.5V) GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fasts

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSP100

N-channelenhancementmodeTrenchMOS?transistor

FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- ?Motorandrel

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

BSS100

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BSS100

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BST100

P-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION P-channelverticalD-MOStransistorTO-92variantenvelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES ?VerylowRDS(on) ?DirectinterfacetoC-MOS ?High-speedswitching ?Nosecondbreakdown

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BT100

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: ?On-linetestingwithoutdisconnectingbattery ?Built-indataloggerstoresupto999tests ?SimultaneouslymeasuresDCVoltageandACMilliohms ?Autopoweroff ?IncludesWindows?95/98/NT

EXTECH

Extech Instruments Corporation.

BT100-AL

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: ?On-linetestingwithoutdisconnectingbattery ?Built-indataloggerstoresupto999tests ?SimultaneouslymeasuresDCVoltageandACMilliohms ?Autopoweroff ?IncludesWindows?95/98/NT

EXTECH

Extech Instruments Corporation.

BT100-TL

BatteryCapacityTester

ACmilliohmmeterchecksBatteryConditioninsecondsWhilethebatteryisinservice Features: ?On-linetestingwithoutdisconnectingbattery ?Built-indataloggerstoresupto999tests ?SimultaneouslymeasuresDCVoltageandACMilliohms ?Autopoweroff ?IncludesWindows?95/98/NT

EXTECH

Extech Instruments Corporation.

BTA100

SpeciallyVarieties4Q-Triacs

ETCList of Unclassifed Manufacturers

未分類制造商

BTS100

SmartHighsidePowerSwitchTEMPFET(PchannelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

Features ●Pchannel ●Enhancementmode ●Temperaturesensorwiththyristorcharacteristic ●Thedrainpiniselectricallyshortedtothetab

SIEMENSSiemens Ltd

西門子德國西門子股份公司

BTS100

SmartHighsidePowerSwitch

SmartHighsidePowerSwitch Features ●Pchannel ●Enhancementmode ●Temperaturesensorwiththyristorcharacteristic ●Thedrainpiniselectricallyshortedtothetab

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BTS100

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BU100

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-3package ?Highvoltagecapability APPLICATIONS ?Forhorizontaldeflectionoutputstage ofCTVreceiversandhighvoltalge, fastswitchingandindustrialapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    BR100E

  • 功能描述：

    TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 10A I(C) | TO-210AC

供應(yīng)商型號品牌批號封裝庫存備注價格
BLUEROCKET
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
BLUE ROCKET(藍(lán)箭)
20+
TO-220
50
詢價
24+
N/A
58000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
進(jìn)口原裝
23+
CAN4
1685
優(yōu)勢庫存
 詢價
SUNMATE(森美特)
2019+ROHS
BR-10
66688
森美特高品質(zhì)產(chǎn)品原裝正品免費(fèi)送樣
 詢價
BYTES
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
PH
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
PH
24+
CAN
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
GeneSiC
1935+
N/A
55
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 詢價
GENESIC
1809+
BR-10
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
更多BR100E供應(yīng)商 更新時間2024-11-15 15:00:00

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