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BRA123EMP

PNPBuilt-inResistorTransistorMPAKSeriesInverter,Driver,Switching

Features ?Built–inResistorType ?SimplifiesCircuitDesign ?ReducesBoardSpace ?ComplementarypairwithBRC144EMPseries

HitachiHitachi Semiconductor

日立日立公司

BRA123ETP

PNPBuilt-inResistorTransistorTO-92SeriesInverter,Driver,Switching

Features ?Built–inResistorType ?SimplifiesCircuitDesign ?ReducesBoardSpace ?ComplementarypairwithBRC144ETPseries

HitachiHitachi Semiconductor

日立日立公司

BRC123ECM

NPNBuilt-inResistorTransistorCMPAKSeriesInverter,Driver,Switching

HitachiHitachi Semiconductor

日立日立公司

BS123

DMOSTransistors(N-Channel)

FEATURES ?Highinputimpedance ?Lowgatethresholdvoltage ?Lowdrain-sourceONresistance ?High-speedswitching ?Nominoritycarrierstoragetime ?CMOSlogiccompatibleinput ?Nothermalrunaway ?Nosecondarybreakdown

GE

GE Industrial Company

BSP123

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BSP123

SIPMOSSmall-Signal-Transistor

Feature ?N-Channel ?Enhancementmode ?LogicLevel ?dv/dtrated ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSP123

SIPMOSSmall-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123

N-channelenhancementmodeverticalD-MOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. TheBSS123issuppliedintheSOT23subminiaturesurfacemountingpackage. FEATURES ?’Trench’technology ?Extremelyfastswitching ?Logiclevelcompatible ?Subminiatur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS123

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Zetex

Zetex Semiconductors

BSS123

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

SIPMOS?Small-SignalTransistor ?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BSS123

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS123

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingDIODESproprietary,highdensity,usesadvancedtrenchtechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperform

DIODES

Diodes Incorporated

BSS123

SIPMOSSmall-Signal-Transistor

SIPMOS?Small-Signal-Transistor Feature ?N-Channel ?Enhancementmode ?LogicLevel ?dv/dtrated ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoAECQ101

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS123

PowerMOSFETN-Channel

Features: *LowOn-Resistance:6.0Ω *LowInputCapacitance:20PF *LowOutputCapacitance:9PF *LowThreshole:2.8V *FastSwitchingSpeed:20ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

WEITRON

Weitron Technology

BSS123

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123

SIPMOSSmall-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123

N-ChannelEnhancementModeFieldEffectTransistor

Features ?HighDenseCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?SurfaceMountPackage ?EpoxyMeetsUL94V-0FlammabilityRating ?MoistureSensitivityLevel1 ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?LeadFreeFinish/RoHSComplian

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BSS123

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features HighdensitycelldesignforextremelylowRDS(ON). Applications ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS瑞薩/HITACHI日立
24+
SOT-70
8900
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
HITACHI
16+
SOT-70
2700
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
HITACHI/日立
2022+
3000
全新原裝 貨期兩周
 詢(xún)價(jià)
HITACHI
21+
SOT323
3000
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
未知
23+
BR-4
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
HITACHI
01+
SOT323
3000
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
HITACHI
NA
8560
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢(xún)價(jià)
HITACHI
23+
SOT323
3000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
HITACHI
SOT23
6000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢(xún)價(jià)
HITACHI/日立
2002
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
更多BRA123ECMTL供應(yīng)商 更新時(shí)間2025-1-6 16:30:00

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