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BRB50N06

N-CHANNEL MOSFET in a TO-263 Plastic Package

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BRD50N06

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEB50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB50N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,36A,RDS(ON)=18m?(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED50N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP50N06

50A,60VHeatsinkPlanarN-ChannelPowerMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

CEP50N06

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEP50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP50N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,36A,RDS(ON)=18m?(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU50N06

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU50N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CEU50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU50N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM50N06NPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT50Ampere FEATURE ???????*Smallpackage.(D2PAK) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM50N06PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT36Ampere FEATURE *Smallpackage.(TO-252A) ???????*SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
BRIGHT
24+
LED
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
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AltechCorp.
55
全新原裝 貨期兩周
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Altech Corp.
2022+
51
全新原裝 貨期兩周
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JAE
2022
連接器
10000
全新、原裝
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STANLEY
20+
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83000
LED原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
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2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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STANLEY
21+
35200
一級(jí)代理/放心采購
詢價(jià)
STANLEY
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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STANLEY
2023+
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5600
安羅世紀(jì)電子只做原裝正品貨
詢價(jià)
STANLEY
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多BRB50N06供應(yīng)商 更新時(shí)間2024-10-28 16:18:00