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CEM4435

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=35m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=33m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM4435A

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEM4435A

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?LoadSwitch ?BatterySwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4435A

P-channelEnhancementModePowerMOSFET

Features ?VDS=-30V,ID=-9A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

CET4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8.8A,RDS(ON)=24m?@VGS=-10V. RDS(ON)=35m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4435A

P-Channel35V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches,AdaptorSwitch -NotebookPCs

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

CET4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8.8A,RDS(ON)=24mW@VGS=-10V. RDS(ON)=35mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM4435AJPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT8Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

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2112+
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105000
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10000
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10000
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2021+
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7600
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23+
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30000
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2023+
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6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
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2022+
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7600
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12800
公司只做原裝,誠(chéng)信經(jīng)營(yíng)
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21+
SOP-8
10000
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藍(lán)箭
21+
SOP-8
13880
公司只售原裝,支持實(shí)單
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更多BRCS4435SC供應(yīng)商 更新時(shí)間2025-1-25 15:00:00