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BRUS350

ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

Electronic devices inc.

BSP350

MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maxi

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BSP350

MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maximumcurrentinternal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSWM350DH-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BSWM350DV-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BUZ350

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ350

SIPMOSPowerTransistor

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BUZ350

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

C350

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350

MILITARYSPECIFCATIONSONBACK

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED Multilayerceramiccapacitorsareavailableinavarietyofphysicalsizesandconfigurations,includingleadeddevicesandsurfacemountedchips.Leadedstylesincludemoldedandconformallycoatedpartswithaxialandradialleads.However

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

AluminumElectrolyticCapacitors

KEMETKEMET Corporation

基美基美公司

C350

MULTILAYERCERAMICCAPACITORS/AXIAL&RADIALLEADED

KEMETKEMET Corporation

基美基美公司

C350

MAGNETICSFORRF,POWER,FILTERANDDATAAPPLICATIONS

COILCRAFTCoilcraft lnc.

線藝美國線藝公司

C350E

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350M

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350N

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

C350N

PhaseControlSCR115AmperesAverage1600Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

供應商型號品牌批號封裝庫存備注價格
ON
12+
TO-252
15000
全新原裝,絕對正品,公司現貨供應。
 詢價
NULL
23+
TO-252
6000
專業(yè)優(yōu)勢供應
 詢價
ON/安森美
21+
TO-252
30000
只做正品原裝現貨
 詢價
BOSUNG
2022+
1000
全新原裝 貨期兩周
 詢價
BR
24+
TO-252
5000
只做原裝公司現貨
 詢價
ON
23+
SOP
12000
全新原裝假一賠十
 詢價
藍箭
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
藍箭
22+
TO-252
43327
原裝正品現貨
 詢價
藍箭
18+
TO-252
41200
原裝正品,現貨特價
 詢價
B
23+
TO-252
10000
公司只做原裝正品
 詢價
更多BRD350供應商 更新時間2025-1-18 11:04:00

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