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DTC314TK

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TS

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTC314TU

Digitaltransistors(built-inresistor)

600mA/15VDigitaltransistors(withbuilt-inresistors) Features Inadditiontothefeaturesofregulardigitaltransistors, 1)Lowsaturationvoltage,typicallyVCE(sat)=40mVatIC/IB=50mA/2.5mA,makesthesetransistorsidealformutingcircuits. 2)Thesetransistorscanbeusedathig

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EL-314

InfraredEmittingDiodes(GaAs)

TheEL-314ahigh-powerGaAsIREDmountedinaclearsidelookingpackage,iscompact,lowprofile,andeasytomount. FEATURES ?Compact ?Lowprofilepackage ?Low-cost ?Sidelookingplasticpackage APPLICATIONS ?Photointerrupters ?Opticalswitches ?Toys

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314

ESDS31xData-LineSurgeandESDProtectionDiodeArray

1Features ?IEC61000-4-2ESDprotection: –±30kVContactDischarge –±30kVAirGapDischarge ?IEC61000-4-4EFTprotection: –80A(5/50ns) ?IEC61000-4-5surgeprotection: –25A(8/20μs) ?IOcapacitance: –4.5pF(typical) ?DCbreakdownvoltage:5.5V(minimum) ?Ultralowleakagec

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

ESDS314DBVR

Data-LineSurgeandESDProtectionDiodeArray

TI1Texas Instruments

德州儀器

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