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BSC052N03LS

OptiMOSTMPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC052N03LS

n-ChannelPowerMOSFET

Features ?OptimizedforhighperformanceBuckconverter ?Verylowon-resistanceRDS(on)@VGS=4.5V ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingto

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC052N03S

OptiMOS2Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyfornotebookDC/DCconverters ?QualifiedaccordingtoJEDEC1fortargetapplications ?N-channel ?Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC052N03SG

OptiMOS??Power-Transistor

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyfornotebookDC/DCconverters ?QualifiedaccordingtoJEDEC1fortargetapplications ?Logiclevel/N-channel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiortherma

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSO052N03S

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSO052N03S

OptiMOS2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    BSC052N03S G

  • 功能描述:

    MOSFET OptiMOS2 PWR-MOSFET N-CH

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多BSC052N03S G供應(yīng)商 更新時(shí)間2025-1-18 16:30:00