BSH101

N-channel enhancement mode MOS transistor

DESCRIPTION N-channelenhancementmodeMOStransistorinaSOT23SMDpackage. FEATURES ?Verylowthreshold ?High-speedswitching ?Nosecondarybreakdown ?DirectinterfacetoC-MOS,TTLetc. APPLICATIONS ?Powermanagement ?DCtoDCconverters ?Batterypoweredapplications ?Glue-l

BSM101

SIMOPACModule(PowermoduleSingleswitchNchannelEnhancementmode)

SIMOPAC?Module VDS=50V ID=200A RDS(on)=3.0m? ●Powermodule ●Singleswitch ●Nchannel ●Enhancementmode ●Packagewithinsulatedmetalbaseplate ●Packageoutline/Circuitdiagram:11)

BSM101AR

SIMOPACModule(PowermoduleSingleswitchNchannelEnhancementmode)

SIMOPAC?Module VDS=50V ID=200A RDS(on)=3.0m? ●Powermodule ●Singleswitch ●Nchannel ●Enhancementmode ●Packagewithinsulatedmetalbaseplate ●Packageoutline/Circuitdiagram:11)

BSS101

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V

BT101

DC/DCConverters

BTF101

TNCADAPTER,BULKHEAD,HERMETICALLYSEALED,50OHM

BUJ101A

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorinTO220ABenvelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,converters,inverters,switchingregulators,motorcontrolsystems,etc.

BUJ101AU

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorintheI-PAK/SOT533envelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,convertersandinverters,etc.

BUJ101AX

SiliconDiffusedPowerTransistor

GENERALDESCRIPTION High-voltage,high-speedplanar-passivatednpnpowerswitchingtransistorinaplasticfull-packenvelopeintendedforuseinhighfrequencyelectroniclightingballastapplications,converters,inverters,switchingregulators,motorcontrolsystems,etc.

BUZ101

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtratedLowon-resistance)

?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?Lowon-resistance ?175°Coperatingtemperature ?alsoinTO-220SMDavailable

BUZ101

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=29A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

BUZ101L

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-ratedLogicLevel)

?Nchannel ?Enhancementmode ?Avalanche-rated ?LogicLevel ?dv/dtrated ?Lowon-resistance ?175°Coperatingtemperature ?alsoinTO-220SMDavailable

BUZ101S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature

BUZ101SL

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rated)

?Nchannel ?Enhancementmode ?LogicLevel ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature ?alsoinSMDavailable

BYP101

FREDDiode(FastrecoveryepitaxialdiodeSoftrecoverycharacteristics)

?Fastrecoveryepitaxialdiode ?Softrecoverycharacteristics

BYP101

FREDDiode

FEATURES ·LowSwitchingLosses ·LowLeakageCurrent ·Ultrafastrecoverytime APPLICATIONS ·PFC ·Half-bridge/full-bridgeswitched-modepowersupplies ·Half-bridgelightingballasts

BYX101

High-voltagesoft-recoverycontrolledavalancherectifiers

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched.Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEA

BYX101G

High-voltagesoft-recoverycontrolledavalancherectifiers

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched.Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEA

C-101-K

CoilsandChokesforgeneraluse

CB101

MINIATURE,REGULATEDHIGHVOLTAGEDCTODCCONVERTERS