訂購數(shù)量 | 價(jià)格 |
---|---|
1+ |
BSM200GB120DLC_E3256_INFINEON/英飛凌_IGBT 模塊 IGBT 1200V 200A浙江永芯
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
BSM200GB120DLC_E3256
- 功能描述:
IGBT 模塊 IGBT 1200V 200A
- RoHS:
否
- 制造商:
Infineon Technologies
- 產(chǎn)品:
IGBT Silicon Modules
- 配置:
Dual 集電極—發(fā)射極最大電壓
- VCEO:
600 V
- 集電極—射極飽和電壓:
1.95 V 在25
- C的連續(xù)集電極電流:
230 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
445 W
- 最大工作溫度:
+ 125 C
- 封裝/箱體:
34MM
供應(yīng)商
- 企業(yè):
浙江永芯科技有限公司
- 商鋪:
- 聯(lián)系人:
林小姐
- 手機(jī):
18758020211
- 詢價(jià):
- 電話:
18758020211
- 地址:
中國廣東深圳市深圳市福田區(qū)中航路佳和大廈5C015
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