| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BSP | Precision Potentiometer | BITECHBi technologies 瑞谷拜特上海瑞谷拜特軟件技術(shù)有限公司 | BITECH | |
BSP | Space-saving Two-wire Signal Conditioners B-UNIT | MSYSTEMM-System Co.,Ltd. 愛模愛模系統(tǒng)有限公司 | MSYSTEM | |
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorina4-pinplasticSOT223SMDpackage. FEATURES ?Highspeedswitching ?Nosecondarybreakdown ?Verylowon-stateresistance. APPLICATIONS ?Motorandactuatordrivers ?Powermanagement ?Synchronizedrectification. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel 30 V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?AEC-Q101Qualifiedc ?100RgandUISTested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-channel enhancement mode field-effect transistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?1technology. Productavailability: BSP030inSOT223. 2.Features nTrenchMOS?technology nFastswitching nLowon-stateresistance nLogiclevelcompatible nSurfacemountpackage. 3 | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorina4-pinplasticSOT223SMDpackage. FEATURES ?Highspeedswitching ?Nosecondarybreakdown ?Verylowon-stateresistance. APPLICATIONS ?Motorandactuatordrivers ?Powermanagement ?Synchronizedrectification. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel enhancement mode TrenchMOS transistor VDSS=30V ID=6A RDS(ON)≤100m?(VGS=10V) RDS(ON)≤200m?(VGS=4.5V) GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fasts | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel enhancement mode TrenchMOS? transistor FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Highthermalcyclingperformance ?Lowthermalresistance GENERALDESCRIPTION N-channelenhancementmode field-effecttransistorinaplastic envelopeusing’trench’ technology. Applications:- ?Motorandrel | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeandintendedforuseinrelay,high-speedandlinetransformerdrivers. FEATURES ?VerylowRDS(on) ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching ?Nosecondarybreakdown. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelope. Intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdriverswitching. FEATURES ?DirectinterfacetoC-MOS,TTL,etc.due | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeandintendedforuseinrelay,high-speedandline-transformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching ?Nosecondarybreakdown | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeanddesignedforuseintelephoneringercircuitsandforapplicationinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching ?No | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel 100-V (D-S) MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-channel enhancement mode field-effect transistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?1technology. Productavailability: BSP110inSOT223. 2.Features nTrenchMOS?technology nVeryfastswitching nLogiclevelcompatible nSurfacemountpackage. 3.Applications nRela | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223envelope,intendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT223packageandintendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-spe | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel 200 V (D-S) MOSFET FEATURES ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-channel enhancement mode vertical D-MOS transistor FEATURES ·DirectinterfacetoC-MOS,TTL, etc. ·High-speedswitching ·Nosecondarybreakdown. DESCRIPTION N-channelenhancementmode verticalD-MOStransistorina SOT223packageandintendedfor useasalinecurrentinterruptorin telephonesetsandforapplicationsin relay,high- | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) ?Nchannel ?Enhancementmode ?LogicLevel ?VGS(th)=0.8...2.0V | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-PNP
- 性質(zhì)：
表面帖裝型 （SMD）_低頻或音頻放大 （LF）_開關(guān)管
- 封裝形式：
貼片封裝
- 極限工作電壓：
200V
- 最大電流允許值：
1A
- 最大工作頻率：
>15MHZ
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
1.5W
- 放大倍數(shù)：
- 圖片代號：
H-99
- vtest：
200
- htest：
15000100
- atest：
1
- wtest：
1.5
詳細(xì)參數(shù)
- 型號：
BSP
- 制造商：
TE Connectivity
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
PG-SOT223-4 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
PG-SOT223-4 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
PG-SOT223-4 |
7000 |
詢價(jià) | |||
ROHM |
23+ |
SSOP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
原廠原裝 |
90000 |
一定原裝深圳現(xiàn)貨 |
詢價(jià) | ||
Infineon Technologies |
21+ |
TO2614 TO261AA |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
Nexperia(安世) |
23+ |
NA |
26094 |
10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品,做服務(wù)型企業(yè) |
詢價(jià) | ||
INFINEON |
SOT223 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價(jià) | |||
INFINEON |
21+ |
SOT223 |
19080 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
Infineon/英飛凌 |
SOT-223 |
6000 |
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) |
