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BSS123W

Marking：123；Package：SOT-323；SOT-323 Plastic-Encapsulate MOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

Marking：K23；Package：SOT-323；N-Channel MOSFET

FEATURE ?SurfaceMountPackage ?HighDensityCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?RuggedandReliable APPLICATION ?SmallServoMotorControls ?PowerMOSFETGateDrivers ?SwitchingApplication

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS123W

N-Channel Power MOSFET

FEATURES ●LowRDS(ON)tominimizeconductivelosses ●Logiclevel ●Lowgatechargeforfastpowerswitching ●RoHSCompliant ●Halogen-freeaccordingtoIEC61249-2-21 APPLICATIONS ●LowSideLoadSwitching ●LevelShiftCircuits ●GeneralSwitchCircuits

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

BSS123W_0711

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W-7-F

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123WQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpe

DIODES

Diodes Incorporated

BSS123WQ-7-F

N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpe

DIODES

Diodes Incorporated

BSS123_08

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

BSS123_1

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

Diodes Incorporated

BSS123_10

SIPMOS Small-Signal-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    BSS123

  • 制造商：

    ANBON SEMICONDUCTOR (INT'L) LIMITED

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)

  • 包裝：

    管件

  • 描述：

    N-CHANNEL ENHANCEMENT MODE MOSFE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NXP/恩智浦
24+
SOT23
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
ON/安森美
22+
SOT23
75000
原裝正品
 詢價(jià)
23+
NA
12328
原裝正品價(jià)格優(yōu)惠,長(zhǎng)期優(yōu)勢(shì)供應(yīng)
 詢價(jià)
FAIRCHILD/仙童
25+
SOT-23
154502
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
onsemi
24+
SOT-23-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ON-SEMI
22+
N/A
3000
原裝正品 香港現(xiàn)貨
 詢價(jià)
2015+
30
公司現(xiàn)貨庫(kù)存
 詢價(jià)
FAIRCHILD
SOT-23
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價(jià)
NXP
16+/17+
SOT23
3500
原裝正品現(xiàn)貨供應(yīng)56
 詢價(jià)
FAIRCHILD
12+
SOT23
6000
原裝正品現(xiàn)貨
 詢價(jià)
更多BSS123供應(yīng)商 更新時(shí)間2025-4-2 16:36:00

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