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BSS123Q

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInp

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BSS123W

SOT-323Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

N-ChannelEnhancementModeMOSFET

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BSS123W

N-ChannelMOSFET

FEATURE ?SurfaceMountPackage ?HighDensityCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?RuggedandReliable APPLICATION ?SmallServoMotorControls ?PowerMOSFETGateDrivers ?SwitchingApplication

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS123WQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpe

DIODES

Diodes Incorporated

BUL123S

SiliconNPNtransistorinaTO-92PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

BYD123

Ultrafastlow-lossrectifier

DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec?technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CD123D-B

CD123D-B1xRSchottkyBarrierChipDiodeSeries

Features ■RoHScompliant* ■Leadlesschipform ■Highcurrentcapability ■Lowforwardvoltage ■Halogenfree** Applications ■SwitchModePowerSupplies(SMPS) ■Portableequipmentbatteries ■Highfrequencyrectification ■DC/DCconverters ■Telecommunications

BournsBourns Electronic Solutions

伯恩斯伯恩斯（邦士）

CEP123

POWERINDUCTORS(SMDType)

SUMIDASumida America Components Inc.

勝美達電子

CFPT-123

VCTCXOSpecification

IQD

IQD Frequency Products Ltd

CHDTA123EEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EMPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-723) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbiasres

CHENMKOchenmko

力勤股份有限公司

CHDTA123EUPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123JKPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

詳細參數(shù)

  • 型號：

    BSS123NH

  • 制造商：

    Infineon Technologies

  • 功能描述：

    SP000870646

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
Infineon
23+
SOT-23
5800
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
SON/INFINEON
24+
SOT-23
5000
只做原裝公司現(xiàn)貨
 詢價
INFINEON
21+
SOT-23
60000
全新進口原裝現(xiàn)貨QQ：505546343手機17621633780曹小姐
 詢價
INFINEON
19+
SOT23
66573
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
Infineon
23+
NA
19854
專業(yè)電子元器件供應鏈正邁科技特價代理QQ1304306553
 詢價
英飛凌/INFINEON
22+
SOT23-3L
24600
原裝正品現(xiàn)貨
 詢價
三年內(nèi)
1983
納立只做原裝正品13590203865
 詢價
更多BSS123NH供應商 更新時間2024-11-19 15:00:00

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