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BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInp

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS123W

SOT-323Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

N-ChannelEnhancementModeMOSFET

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BSS123W

N-ChannelMOSFET

FEATURE ?SurfaceMountPackage ?HighDensityCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?RuggedandReliable APPLICATION ?SmallServoMotorControls ?PowerMOSFETGateDrivers ?SwitchingApplication

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS123WQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpe

DIODES

Diodes Incorporated

BUL123S

SiliconNPNtransistorinaTO-92PlasticPackage.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BYD123

Ultrafastlow-lossrectifier

DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec?technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CD123D-B

CD123D-B1xRSchottkyBarrierChipDiodeSeries

Features ■RoHScompliant* ■Leadlesschipform ■Highcurrentcapability ■Lowforwardvoltage ■Halogenfree** Applications ■SwitchModePowerSupplies(SMPS) ■Portableequipmentbatteries ■Highfrequencyrectification ■DC/DCconverters ■Telecommunications

BournsBourns Electronic Solutions

伯恩斯

CEP123

POWERINDUCTORS(SMDType)

SUMIDASumida America Components Inc.

勝美達(dá)電子

CFPT-123

VCTCXOSpecification

IQD

IQD Frequency Products Ltd

CHDTA123EEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EMPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-723) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbiasres

CHENMKOchenmko

力勤股份有限公司

CHDTA123EUPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123JKPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JMPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BSS123TC

  • 功能描述：

    MOSFET N-Chnl 100V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Diodes
22+
TO2363 SC59 SOT233
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Diodes
21+
TO2363 SC59 SOT233
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
Diodes Incorporated
2022+
TO-236-3,SC-59,SOT-23-3
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
MCC
23+
SOT-23
231231
原裝正品現(xiàn)貨
 詢價(jià)
MICROCOMMERCIALCOMPONENTS
24+
NA
42000
原裝現(xiàn)貨,專業(yè)配單專家
 詢價(jià)
MICROCOMMERCIALCOMPONENTS
21+
NA
42000
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
 詢價(jià)
MCC
22+
NA
3000
原裝正品 價(jià)格極優(yōu)
 詢價(jià)
MCC(美微科)
23+
SOT23(TO236)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
24+
N/A
56000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
MCC
23+
SOT-23
57000
原裝正品現(xiàn)貨 當(dāng)天發(fā)貨 提供BOM
 詢價(jià)
更多BSS123TC供應(yīng)商 更新時(shí)間2025-1-13 15:26:00

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