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BSS138BKS

60 V, 320 mA dual N-channel Trench MOSFET

1.1Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechno

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BSS138BKS

60 V, 320 mA dual N-channel Trench MOSFET

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS138BKS_15

60 V, 320 mA dual N-channel Trench MOSFET

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS138BKS115

60 V, 320 mA dual N-channel Trench MOSFET

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS138BKW

60V,320mAN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■ESDprotection

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS138BKW

Nch60V380mASmallSignalMOSFET

ROHMRohm

羅姆羅姆半導體集團

BSS138BKW

60V,320mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT323(SC-70) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BSS138BKW

nullN-ChannelEnhancementModeMOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

BSS138BWAHZG

Nch60V380mASmallSignalMOSFET

ROHMRohm

羅姆羅姆半導體集團

BSS138C

AdvancedMOSFETprocesstechnology

FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

BSS138-CAR

Plastic-EncapsulateMOSFETS

APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible -CARforautomotiveandother

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS138CR

AdvancedMOSFETprocesstechnology

FeaturesandBenefits: ?AdvancedMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?Fastswitchingandreversebodyrecovery ?150℃operatingtemperature Description: Itutilizesthelates

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowGateThresholdVoltage ●LowInputCapacitance ●Fast

DIODES

Diodes Incorporated

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS138DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?AvailableinLeadFree/RoHSCompliantVersion(Note4) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice(Notes5and6)

DIODES

Diodes Incorporated

BSS138DW

DualN-Channel60V(D-S)MOSFET

?LowOn-Resistance:1.5 FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

DualN-Channel60V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?LowOn-Resistance:2.5Ω ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS138DW

DualN-ChannelMOSFET

Feature ?HighdensitycelldesignforextremelylowRDS(on) ?RuggedandRelaible Application ?DirectLogic-LevelInterface:TTL/CMOS ?BatteryOperatedSystems ?Solid-StateRelays

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BSS138DWK

50VN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol

DIODES

Diodes Incorporated

BSS138DWQ

LowOn-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchin

DIODES

Diodes Incorporated

詳細參數

  • 型號：

    BSS138BKS

  • 制造商：

    NXP Semiconductors

  • 功能描述：

    MOSFET N CH 60V 0.36A SOT363

供應商型號品牌批號封裝庫存備注價格
NEXPERIA
23+
SOT363
150524
原裝正品,現貨庫存,1小時內發(fā)貨
 詢價
NEXP
24+
SOT363
45000
熱賣優(yōu)勢現貨
 詢價
安世
23+
SOT363
15000
進口原裝 假一罰十 特價銷售 歡迎
 詢價
NXP(恩智浦)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
NEXP
2020+PB
SOT363
19500
原裝正品 可含稅交易
 詢價
Nexperia
22+
SOT36
72554
十七年VIP會員,誠信經營，一手貨源，原裝正品可零售！
 詢價
NEXPERIA
23+
SOT363
6000
全新原裝現貨、誠信經營!
 詢價
NEXPERIA
23+
100000
原裝現貨價格優(yōu)勢,提供BOM一站式配單服務
 詢價
NXP
2024+
N/A
70000
柒號只做原裝 現貨價秒殺全網
 詢價
Nexperia/安世
22+
SOT363
180000
原廠原裝正品現貨
 詢價
更多BSS138BKS供應商 更新時間2024-11-18 14:59:00

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