首頁 >BSS138K-HXY>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PowerMOSFET200mA,50V PowerMOSFET200mA,50V N?ChannelSOT?23 TypicalapplicationsareDC?DCconverters,powermanagementinportableandbattery?poweredproductssuchascomputers,printers,PCMCIAcards,cellularandcordlesstelephones. Features ?LowThresholdVoltage(VGS(th):0.5V?1.5V)Make | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
POWERMOSFET0.2A,50VN-CHANNEL DESCRIPTION The BSS138LisavailableinSOT23package FEATURES ?50V/0.2A RDS(ON)=3.5Ω(Max)@VGS=5VID=0.2A RDS(ON)=10Ω(Max)@VGS=2.75VID=0.2A ?SuperHighdensecelldesignforextremelylowRDS(ON) ?ReliableandRugged ?LowThresholdVoltage(0.5V-1.5V)MakeitIdealforLow | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
N-ChannelEnhancementModeMOSFET Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
SIPMOSSmall-Signal-Transistor Features ?N-channel ?Enhancementmode ?Logiclevel ?dv/dtrated ?Pb-freelead-plating;RoHScompliant ?QualifiedaccordingtoAECQ101 ?HalogenfreeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSSmall-Signal-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel50-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
60V,360mAN-channelTrenchMOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechn | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
60V,360mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology AEC- | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-ChannelEnhancementModeMOSFET Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
60V,320mAdualN-channelTrenchMOSFET Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ■Logic-levelcompatible ■Veryfastswitching ■TrenchMOSFETtechnology ■AEC- | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
60V,320mAdualN-channelTrenchMOSFET 1.1Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmall SOT363(SC-88)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnolog | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
LoadSwitch Features VDS(V)=60V RDS(ON) | UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司(簡稱UMW?) | UMW | ||
MOSFET Features RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
60V,320mAN-channelTrenchMOSFET | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
60V,320mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmall SOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology A | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-ChannelEnhancementModeMOSFET Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
50VN-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS138Qissuitableforautomotiveapplications requiring | DIODES Diodes Incorporated | DIODES | ||
Plastic-EncapsulateMOSFETS FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET FeaturesandBenefits ?BVDSS>50V ?RDS(on)≤3.5Ω@VGS=5V ?MaximumcontinuousdraincurrentID=200mA ?“LeadFree”,RoHSCompliant(Note1) ?HalogenandAntimonyFree.GreenDevice(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHighReliability | DIODES Diodes Incorporated | DIODES |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
47000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
FAIRCHILD/仙童 |
20+ |
SOT23 |
43000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
FAIRCHILD/仙童 |
1925+ |
SOT23 |
12500 |
原裝現(xiàn)貨價格優(yōu)勢可供更多可出樣 |
詢價 | ||
FAIRCHILD |
SOT23 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
FAIRCHILD/仙童 |
22+ |
SOT23 |
25000 |
只有原裝絕對原裝,支持BOM配單! |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
SOT23 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
ON/安森美 |
23+ |
SOT-23-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON/安森美 |
23+ |
SOT23-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ON/安森美 |
2022 |
SOT-23-3 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
ON/安森美 |
21+ |
SOT233 |
13880 |
公司只售原裝,支持實單 |
詢價 |
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