首頁 >BSZ100N03LS G>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

BSZ100N03LSG

OptiMOS??Power-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSZ100N03MSG

OptiMOS??M-SeriesPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CMP100N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

D100N03L

N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET

Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

FIR100N03DFNG

30V-ChannelMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR100N03LG

30V-ChannelMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR100N03PG

30V-ChannelMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

HLDD100N03

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達廣東匯利達半導(dǎo)體有限公司

HM100N03

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM100N03D

HighdensitycelldesignforultralowRdson

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

PHB100N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHB100N03LT

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■TrenchMOS?technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RES100N03

Switching(30V,10A)

Features 1)LowQg. 2)Lowon-resistance. 3)Exellentresistancetodamagefromstaticelectric Structure SiliconN-channel MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RRS100N03-TB

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RSH100N03

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Powerswitching,DC/DCconverter.

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RSS100N03

Switching(30V,?10A)

Switching(30V,±10A) Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). Applications Powerswitching,DC/DCconverter.

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RSS100N03FRA

Nch30V10APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RSS100N03HZG

Nch30V10APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團

RSS100N03TB

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RXH100N03

4VDriveNchMOSFET

4VDriveNchMOSFET Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallSurfaceMountPackage(SOP8). Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團

詳細參數(shù)

  • 型號:

    BSZ100N03LS G

  • 功能描述:

    MOSFET OptiMOS 3 M-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INF
24+
5000
詢價
INFINEON
09PB
QFN
1335
全新原裝進口自己庫存優(yōu)勢
詢價
Infineon
23+
TDSON-8
7750
全新原裝優(yōu)勢
詢價
INF
23+
WDFN8
5000
原裝正品,假一罰十
詢價
INFINEON
24+
TSDSON-8
5000
只做原裝公司現(xiàn)貨
詢價
Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價
Infineon
17+
QFN
9988
只做原裝進口,自己庫存
詢價
英飛凌
報價為準
INF
5000
國外訂貨7-10個工作日
詢價
INFINEO
21+
TSDSON-
12588
原裝正品,自己庫存 假一罰十
詢價
Infineon/英飛凌
18+
QFN
31970
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
詢價
更多BSZ100N03LS G供應(yīng)商 更新時間2025-1-5 14:30:00