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BVSS123LT1G

Power MOSFET 170 mAmps, 100 Volts

PowerMOSFET170mAmps,100Volts N?ChannelSOT?23 Features ?Pb?FreePackagesareAvailable

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BYD123

Ultrafastlow-lossrectifier

DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec?technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CD123D-B

CD123D-B1xRSchottkyBarrierChipDiodeSeries

Features ■RoHScompliant* ■Leadlesschipform ■Highcurrentcapability ■Lowforwardvoltage ■Halogenfree** Applications ■SwitchModePowerSupplies(SMPS) ■Portableequipmentbatteries ■Highfrequencyrectification ■DC/DCconverters ■Telecommunications

BournsBourns Electronic Solutions

伯恩斯

CEP123

POWERINDUCTORS(SMDType)

SUMIDASumida America Components Inc.

勝美達(dá)電子

CFPT-123

VCTCXOSpecification

IQD

IQD Frequency Products Ltd

CHDTA123EEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EMPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-723) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbiasres

CHENMKOchenmko

力勤股份有限公司

CHDTA123EUPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123JKPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JMPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JUPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123YEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123YKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123YMPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-723) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbiasres

CHENMKOchenmko

力勤股份有限公司

CHDTA123YUPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTB123EKPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTB123TKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT500mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTB123YKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT500mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BVSS123L

  • 功能描述:

    MOSFET NFET 100V 170MA 6OH

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi
24+
SOT-23-3(TO-236)
30000
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ON
SOT-23
30216
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23000
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ON/安森美
24+
SOT-23
12000
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ON/安森美
22+
SOT-23
18000
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ON(安森美)
2023+
SOT-23
4550
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23+
SOT-23
25048
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ON/安森美
23+
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29316
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23+
SOT23
15000
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SOT-23
10216
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更多BVSS123L供應(yīng)商 更新時(shí)間2025-1-18 16:46:00