CA3127E中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

Description

The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

Features

? Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz

? Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz

? Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz

? Five Independent Transistors on a Common Substrate

Applications

? VHF Amplifiers

? Multifunction Combinations - RF/Mixer/Oscillator

? Sense Amplifiers

? Synchronous Detectors

? VHF Mixers

? IF Converter

? IF Amplifiers

? Synthesizers

? Cascade Amplifiers