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    CEU630N
    N-ChannelEnhancementModeFieldEffectTransistor
    CETChino-Excel Technology
    華瑞華瑞股份有限公司
    

    CEU630N
    N-ChannelMOSFETusesadvancedtrenchtechnology
    DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
    杜因特深圳市杜因特半導體有限公司
    

    CEU630N
    N-ChannelEnhancementModeFieldEffectTransistor
    
FEATURES
200V,7.5A,RDS(ON)=0.36W@VGS=10V.
SuperhighdensecelldesignforextremelylowRDS(ON).
Highpowerandcurrenthandingcapability.
TO-251&TO-252package.
Leadfreeproductisacquired.
    CET-MOSCET-MOS Technology Corp.
    華瑞華瑞功率電子股份有限公司
    

    CEUF630
    N-ChannelEnhancementModeFieldEffectTransistor
    
FEATURES
●200V,9A,RDS(ON)=400mΩ@VGS=10V.
●SuperhighdensecelldesignforextremelylowRDS(ON).
●Highpowerandcurrenthandlingcapability.
●TO-251&TO-252package.
    CETChino-Excel Technology
    華瑞華瑞股份有限公司
    

    CHM630PAPT
    N-ChannelEnhancementModeFieldEffectTransistor
    CHENMKOCHENMKO ENTERPRISE CO., LTD.
    力勤力勤股份有限公司
    

    CL630-CRM
    3rd/2ndGenIntel?Xeon?/Intel?CoreTMATX
    GSR
    GSR Technology Ltd
    

    CMS630
    10thGenIntel?CoreTMATX
    DFIDFI Inc
    友通資訊友通資訊股份有限公司
    

    COM630-B
    COMExpressCarrierBoard
    DFIDFI Inc
    友通資訊友通資訊股份有限公司
    

    CP630
    PowerTransistorsPNP-SiliconDarlingtonTransistorChip
    
PROCESSDETAILS
ProcessEPITAXIALPLANAR
DieSize80x80MILS
DieThickness8.0MILS
BaseBondingPadArea18x27MILS
EmitterBondingPadArea34x34MILS
TopSideMetalizationAl-30,000?
BackSideMetalizationTi/Pd/Ag-20,000?
    CentralCentral Semiconductor Corp
    美國中央半導體
    

    CS630
    PhaseControlThyristor
    
ITRMS=1400A

ITAVM=630A

VRRM=1200-1600


Features

●Thyristorforlinefrequency

●Internationalstandardpackage

●Long-termstabilityofblockingvoltages

●Gateandauxiliarycathodepinconnection

●Amplifyinggate


TypicalApplications

●DCMotorcontro
    IXYS
    IXYS Corporation
    

    
            
    
		
    
            
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