DESCRIPTION

The CAT28F512 is a high speed 64K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard EPROM and EEPROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a

two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.

The CAT28F512 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 32-pin plastic DIP, 32-pin PLCC or 32-pin TSOP packages.

FEATURES

■ Fast Read Access Time: 90/120/150 ns

■ Low Power CMOS Dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 μA max (CMOS levels)

■ High Speed Programming:

–10 μs per byte

–1 Sec Typ Chip Program

■ 12.0V ± 5 Programming and Erase Voltage

■ Electronic Signature

■ Commercial, Industrial and Automotive Temperature Ranges

■ Stop Timer for Program/Erase

■ On-Chip Address and Data Latches

■ JEDEC Standard Pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP ( 8 x 20)

■ 100,000 Program/Erase Cycles

■ 10 Year Data Retention

■ Green Package Options Available

CAT28F512LI12屬于集成電路（IC） > 存儲器。安森美半導(dǎo)體公司制造生產(chǎn)的CAT28F512LI12存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。