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首頁 >CBP-840C>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CBP-840C	文件：431.64 Kbytes Page：3 Pages	Bandpass Filter	MINI Mini-Circuits	MINI
CBP-840C+	文件：431.64 Kbytes Page：3 Pages	Bandpass Filter	MINI Mini-Circuits	MINI
CD840ZQ	文件：643.99 Kbytes Page：8 Pages	10000hat85?C	JIANGHAIJianghai Europe GmbH 江海歐洲江蘇江海電容器股份有限公司	JIANGHAI
CDBC840-HF	文件：461.87 Kbytes Page：4 Pages	SMDSchottkyBarrierRectifiers Features -Built-instrainrelief. -Highsurgeandcurrentcapability. -Foruseinlowvoltage,highfrequencyinvertorsfree -wheelingandpolarityprotection. -Metalsiliconjunctionwithguarding. -8.0Arectificationinsmallpackage.	COMCHIPComchip Technology 典琦典琦科技股份有限公司	COMCHIP
CDBG840-G	文件：61.59 Kbytes Page：2 Pages	SMDSchottkyBarrierDiode ReverseVoltage:20~60Volts ForwardCurrent:8A Features: ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlame RetardantEpoxyMoldingCompound. ?Forsurfacemountedapplications. ?ExceedsenviromentalstandardsofMIL-S-19500/228 ?Lo	COMCHIPComchip Technology 典琦典琦科技股份有限公司	COMCHIP
CEB840A	文件：440.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB840A	文件：583.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB840B	文件：605.09 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB840G	文件：403.73 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB840G	文件：650.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB840L	文件：401.97 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED840A	文件：404.1 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■500V,7.5A,RDS(ON)=0.85Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED840A	文件：712.35 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7.5A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED840B	文件：518.95 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7.5A,RDS(ON)=0.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED840G	文件：624.15 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,7A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840A	文件：440.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF840A	文件：583.99 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840B	文件：605.09 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF840G	文件：403.73 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF840G	文件：650.17 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市翻身網(wǎng)絡(luò)技術(shù)發(fā)展有限公司	CBP-840C	Mini-circuits	18+	原廠原裝	6000	專注Mini射頻微波全系列,只做原裝正品,現(xiàn)貨庫存	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	CBP-840C+	MINI	24+	SMD	3600	MINI專營品牌全新原裝正品假一賠十	詢價(jià)
深圳市納立科技有限公司	CBP-840C+	MINI	三年內(nèi)		1983	只做原裝正品	詢價(jià)
瑞航達(dá)科技(深圳)有限公司	CBP-840C+	Mini-Circuits			638	原裝正品	詢價(jià)
北京逸博微科技有限公司	CBP-840C+	MINI	20+		200	MINI代理分銷常備現(xiàn)貨!	詢價(jià)
深圳市中拓海外電子有限公司	CBP-840C+	Mini-Circuits	2023+	MP1766	25	專業(yè)銷售MINI電子元件,常年備有大量庫存	詢價(jià)
深圳市創(chuàng)盛芯科技有限公司	CBP-840C+	MINI	24+		9000	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市湘達(dá)電子科技有限公司	CBP-840C+	MINI	22+	NA	5000	只做原裝,價(jià)格優(yōu)惠,長期供貨。	詢價(jià)
深圳市英瑞芯科技有限公司	CBP-840C+	MINI		NA	8600	原裝正品,歡迎來電咨詢!	詢價(jià)
深圳市恒佳微電子有限公司	CBP-840C+	MINI	2021+		3000	十年專營原裝現(xiàn)貨,假一賠十	詢價(jià)

更多CBP-840C供應(yīng)商更新時(shí)間2020-6-4 9:34:00

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