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CEB840B

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB840G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB840G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB840L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■500V,7.5A,RDS(ON)=0.85Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,7.5A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED840B

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,7.5A,RDS(ON)=0.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED840G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 500V,7A,RDS(ON)=0.85W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF840A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-263
360000
交期準時服務周到
 詢價
CET
2020+
TO-263
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CET/華瑞
21+
TO-263
10000
全新原裝 公司現(xiàn)貨 價格優(yōu)
 詢價
CET/華瑞
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
C
T0-263
22+
6000
十年配單,只做原裝
 詢價
CET/華瑞
23+
TO-263
79999
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
C
23+
T0-263
6000
原裝正品，支持實單
 詢價
CET/華瑞
22+
TO-263
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價
CET
23+
TO-263
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
CET/華瑞
24+
NA/
3272
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
更多CEB840B供應商 更新時間2025-4-17 10:34:00

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