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CEB85N75

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB85N75

N-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB85N75V

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■75V,85A,RDS(ON)=12mΩ@VGS=12V. RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB85N75V

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 75V,85A,RDS(ON)=12mW@VGS=12V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=13mW@VGS=10V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP85N75V

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■75V,85A,RDS(ON)=12mΩ@VGS=12V. RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP85N75V

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 75V,85A,RDS(ON)=12mW@VGS=12V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=13mW@VGS=10V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEB85N75

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
C
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
ADI
23+
N/A
8000
只做原裝現(xiàn)貨
 詢價(jià)
ADI
23+
N/A
7000
詢價(jià)
CET/華瑞
23+
TO-263
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
CET
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
CET
24+
5000
詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
更多CEB85N75供應(yīng)商 更新時(shí)間2025-2-2 14:30:00

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