零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CEP85N75V | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■75V,85A,RDS(ON)=12mΩ@VGS=12V. RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
CEP85N75V | N-Channel Enhancement Mode Field Effect Transistor FEATURES 75V,85A,RDS(ON)=12mW@VGS=12V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=13mW@VGS=10V. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 75V,85A,RDS(ON)=12mW@VGS=12V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=13mW@VGS=10V. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■75V,85A,RDS(ON)=12mΩ@VGS=12V. RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 75V,89A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-3Ppackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
CET/華瑞 |
2022+ |
TO-220 |
24110 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
CET |
23+ |
TO-220 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
CET/華瑞 |
2022+ |
TO-220 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
CET/華瑞 |
20+ |
TO-220 |
7500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價(jià) | ||
CET |
23+ |
TO-220 |
6000 |
正品原裝貨價(jià)格低 |
詢價(jià) | ||
SR |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
CET |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
CET |
24+ |
TO-220 |
35200 |
一級(jí)代理/放心采購 |
詢價(jià) |
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