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CEB85N75V

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■75V,85A,RDS(ON)=12mΩ@VGS=12V. RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB85N75V

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 75V,85A,RDS(ON)=12mW@VGS=12V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=13mW@VGS=10V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package&TO-220Ffull-pakforthroughhole.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP85N75V

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■75V,85A,RDS(ON)=12mΩ@VGS=12V. RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP85N75V

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 75V,85A,RDS(ON)=12mW@VGS=12V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=13mW@VGS=10V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEWP85N75

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 75V,89A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-3Ppackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-263
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低
 詢價
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
CET
23+
TO-263
6000
原裝正品，支持實單
 詢價
CET/華瑞
2022+
TO-263
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
CET
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
C
23+
TO-263
10000
公司只做原裝正品
 詢價
CET/華瑞
20+
TO-263
32500
現(xiàn)貨很近!原廠很遠!只做原裝
 詢價
CET
24+
5000
詢價
CET
24+
TO-263
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
24+
TO-263
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
更多CEB85N75V供應(yīng)商 更新時間2025-1-3 10:34:00

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