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CEB85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■25V,90A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB85A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,90A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CEB85A3

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-263
360000
專業(yè)供應MOS/LDO/晶體管/有大量價格低
 詢價
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價
CET
24+
TO-263
90000
進口原裝現(xiàn)貨假一罰十價格合理
 詢價
CET
2020+
TO-263
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
SAMSUNG/三星
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
CET/華瑞
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價
CET/華瑞
2022+
TO-263
1239
原廠代理 終端免費提供樣品
 詢價
CET/華瑞
23+
TO-263
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
CET
23+
TO-263
6000
原裝正品，支持實單
 詢價
更多CEB85A3供應商 更新時間2024-12-24 8:30:00

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