首頁(yè) >CD21A2-GY>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,25A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,25A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,20A,RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=70mW@VGS=2.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU21A2

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU21A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,20A,RDS(ON)=40m?@VGS=4.5V. RDS(ON)=70m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM21A2PAPT

N-ChannelEnhancementModeFieldEffectTransistor

CHENMKOchenmko

力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CD21A2-GY

  • 制造商：

    Sealcon USA

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HARRIS/哈里斯
23+
DIP
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
24+
長(zhǎng)期備有現(xiàn)貨
500000
行業(yè)低價(jià),代理渠道
 詢價(jià)
Teledyne Technologies
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
TELEDYNE
22+
DIP6
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
TELEDYNE
2022+
DIP6
57550
詢價(jià)
TELEDYNE
23+
CDIP
5177
現(xiàn)貨
 詢價(jià)
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST
24+
NA
200000
原裝進(jìn)口正口,支持樣品
 詢價(jià)
SD升達(dá)
24+
DIP
52043
只做原裝假一罰萬(wàn)
 詢價(jià)
HAR
24+
DIP
46
詢價(jià)
更多CD21A2-GY供應(yīng)商 更新時(shí)間2025-3-3 9:30:00

相關(guān)規(guī)格書(shū)

更多

相關(guān)庫(kù)存

更多