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CEA3252

N-Channel60-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CEA3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,5A,RDS(ON)=32m?@VGS=10V. RDS(ON)=45m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronousRectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,7.5A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,7.5A,RDS(ON)=28mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,8A,RDS(ON)=29mW@VGS=10V. RDS(ON)=36mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=55mW@VGS=2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3252L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=29mΩ@VGS=10V. RDS(ON)=36mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■Surfacemount

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3252

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,25A,RDS(ON)=28m?@VGS=10V. RDS(ON)=39m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應商型號品牌批號封裝庫存備注價格
TI/德州儀器
2306+
DSBGA
3420
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價
TI
13+
DSBGA4
32258
原裝分銷
 詢價
TI
21+
BGA9
7565
原裝現(xiàn)貨假一賠十
 詢價
TI
21+
BGA9
3200
公司只做原裝,誠信經(jīng)營
 詢價
TI
21+
BGA9
13880
公司只售原裝,支持實單
 詢價
TI
22+
BGA9
8880
原裝認準芯澤盛世！
 詢價
TI/德州儀器
23+
BGA9
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
TI
9
1427+
7565
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
TI
22
BGA9
39890
3月31原裝,微信報價
 詢價
22+
5000
詢價
更多CD3252YDCR供應商 更新時間2025-1-17 15:57:00

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