| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
CDE9230DG | 92 Series Comms And Network Enclosure Productoverview Lowprofileanddeepprofileplastichousingswith removableendpanels.Idealforcommunication equipmentsuchasWi-Firouters. ?StylishlydesignedABSplasticcasewithdouble detachablepanels ?FlameresistantABS(UL94-V0),30sizes, availableinoff-whiteandda | CAMDENBOSS CamdenBoss Ltd. | CAMDENBOSS | |
Ultra-LowQuiescentCurrentBuck | Dialog Dialog Semiconductor | Dialog | ||
Ultra-LowQuiescentCurrentBuck KeyFeatures ■300mAbuckregulator □750nAtotalinputcurrent(buckenabled noload) □Upto81efficiencyat1.8Voutput, 10μAloadcurrents □Inputvoltage2.5Vto5.5V(Minimum 2.75Vforstartup) □Outputvoltage0.6Vto1.9V □DynamicVoltageControl(DVC) ■I2Cinterface | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3A,-200V,1.30Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | Intersil Intersil Corporation | Intersil | ||
3A,-200V,1.30Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | Intersil Intersil Corporation | Intersil | ||
3A,-200V,1.30Ohm,RadHard,P-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.30Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.30Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.30Ohm,RadHard,P-ChannelPowerMOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.32Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.32Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.32Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRF International Rectifier | IRF | ||
-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor | Intersil Intersil Corporation | Intersil |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HRS/廣瀨 |
23+ |
NA/原裝 |
9390 |
代理-優(yōu)勢-原裝-正品-現(xiàn)貨*期貨 |
詢價 | ||
HRS/廣瀨 |
2420+ |
/ |
365663 |
一級代理,原裝正品! |
詢價 | ||
HIROSE |
2306+ |
NA |
6680 |
原裝正品公司現(xiàn)貨,實單來談 |
詢價 | ||
HIROSE |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
AMIS |
2339+ |
QFP-44 |
5650 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
AMIS |
20+ |
MQFP44 |
500 |
樣品可出,優(yōu)勢庫存歡迎實單 |
詢價 | ||
CDE |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 |
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