| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FRM9230R | 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with | Intersil Intersil Corporation | Intersil | |
4A,-200V,1.32Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.32Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.32Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
3A,-200V,1.50Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRF International Rectifier | IRF | ||
-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor | Intersil Intersil Corporation | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
P-CHANNELPOWERMOSFET VDSS-200V ID(cont)-3.6A RDS(on)0.825? FEATURES ?SURFACEMOUNT ?SMALLFOOTPRINT ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?AVALANCHEENERGYRATING ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT | SEME-LAB Seme LAB | SEME-LAB | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) BVDSS-200V RDS(on)0.80? ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
-4.0A,-200V,0.800Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil |
詳細(xì)參數(shù)
- 型號(hào)：
FRM9230R
- 制造商：
INTERSIL
- 制造商全稱(chēng)：
Intersil Corporation
- 功能描述：
4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STANLEY |
2016+ |
SMD |
3194 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢(xún)價(jià) | ||
STA |
22+ |
SMD |
12000 |
只做原裝、原廠優(yōu)勢(shì)渠道、假一賠十 |
詢(xún)價(jià) | ||
STA |
24+ |
SMD |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
STA |
23+ |
SMD |
6850 |
只做原廠原裝正品現(xiàn)貨!假一賠十! |
詢(xún)價(jià) | ||
Panduit Corp |
2010+ |
N/A |
66 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢(xún)價(jià) | ||
STANLEY |
18+ |
LED |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢(xún)價(jià) | ||
24+ |
N/A |
51000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢(xún)價(jià) | |||
STANLEY |
00+ |
LED |
846 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
STANLEY |
23+ |
LED |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
STANLEY |
2022 |
LED |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- FRM9240D
- FRM9240R
- FRME144SBL
- FRME1Y
- FRME22U
- FRME3
- FRME4
- FRMS01-215H
- FRMS11-215H
- FRN0.13TB
- FRN0.25TB
- FRN0.25TW10
- FRN0.38TB
- FRN0.50TB
- FRN1JT100R
- FRN1JT15R0
- FRN1JT27R0
- FRN1JT33R0
- FRN1JT560R
- FRN1W0.47RJP
- FRN1W-103JB
- FRN1W360RJ
- FRN1W470RJP
- FRN1W47KJP
- FRN1W47RJP
- FRN1W4K7JP
- FRN1WR47JP
- FRN1WS-103JB
- FRN2.00TB
- FRN200SJ1R0
- FRN200SJ680R
- FRN-2-1/4
- FRN25J10R
- FRN25J1R0
- FRN25J22R
- FRN25J330R
- FRN2W0.47RJTB
- FRN2W470RJP
- FRN2W47KJP
- FRN2W47RJP
- FRN2W4K7JP
- FRN2WR47JP
- FRN2WS-103JB
- FRN-35
- FRN-4
相關(guān)庫(kù)存
更多- FRM9240H
- FRME1
- FRME1U
- FRME2
- FRME2U
- FRME36EBL
- FRMS01-205H
- FRMS11-205H
- FRN
- FRN0.13TB225
- FRN0.25TB200
- FRN0.25TW1000
- FRN0.38TB125
- FRN0.50TB100
- FRN1JT10R0
- FRN1JT1R00
- FRN1JT2R20
- FRN1JT51R0
- FRN1JT5R10
- FRN1W0.47RJTB
- FRN1W-103JTR
- FRN1W360RTRJ
- FRN1W470RJTB
- FRN1W47KJTB
- FRN1W47RJTB
- FRN1W4K7JTB
- FRN1WR47JTB
- FRN1WS-103JTR
- FRN2.00TB50
- FRN200SJ20R
- FRN-2-1/2
- FRN25J100R
- FRN25J1K0
- FRN25J220R
- FRN25J2R2
- FRN2W0.47RJP
- FRN2W-103JB
- FRN2W470RJTB
- FRN2W47KJTB
- FRN2W47RJTB
- FRN2W4K7JTB
- FRN2WR47JTB
- FRN-3/10
- FRN4
- FRN-4/10
