| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FSL9230R | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRF International Rectifier | IRF | ||
-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor | Intersil Intersil Corporation | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) BVDSS-200V RDS(on)0.80? ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFET VDSS-200V ID(cont)-3.6A RDS(on)0.825? FEATURES ?SURFACEMOUNT ?SMALLFOOTPRINT ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?AVALANCHEENERGYRATING ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) 200V,P-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET | IRF International Rectifier | IRF | ||
-4.0A,-200V,0.800Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung |
詳細(xì)參數(shù)
- 型號(hào)：
FSL9230R
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FSC |
23+ |
TO-263 |
4569 |
專業(yè)優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
IR |
2018+ |
TO262 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心 |
詢價(jià) | ||
23+ |
原廠封裝 |
11888 |
專做原裝正品,假一罰百! |
詢價(jià) | |||
- |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
22+ |
TO262 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
29178 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | |||
- |
23+ |
NA/ |
3300 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
IR |
23+ |
TO262 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO262 |
7000 |
詢價(jià) | |||
TOKO |
22+ |
SMD |
2650 |
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- FSL9230R1
- FSL9230R4
- FSL923A0D1
- FSL923A0R
- FSL923A0R3
- FSL923AOD1
- FSL923AOR1
- FSL923AOR4
- FSLB2520-100K
- FSLB2520-1R0M
- FSLB2520-220K
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- FSLB2520-6R8M
- FSLB-S245A
- FSLBS40
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- FSLC-S090T-G
- FSLC-S170E
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- FSLD52TE
- FSLD54TE
- FSLF-080HL
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- FSLF-S080HL
- FSLH137NY
- FSLH-S090C
- FSLH-S130C
- FSLH-S170C
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- FSLL-S240E
- FSLM2520
- FSLM2520-100J
- FSLM2520-100J=P2
- FSLM2520-100-K
- FSLM2520-101J
- FSLM2520-101-K
- FSLM2520-120J
相關(guān)庫(kù)存
更多- FSL9230R3
- FSL923A0D
- FSL923A0D3
- FSL923A0R1
- FSL923A0R4
- FSL923AOD3
- FSL923AOR3
- FSL-APR-2
- FSLB2520-150K
- FSLB2520-1R5M
- FSLB2520-2R2M
- FSLB2520-3R3M=P2
- FSLB2520-4R7M
- FSLBOT
- FSLB-S245C
- FSLBS80
- FSLC-090P
- FSLC-220SN
- FSLC-C160W
- FSLC-S090M-A1
- FSLC-S090M-P1
- FSLC-S090S-G
- FSLC-S090T-A
- FSLC-S090T-P
- FSLC-S170N
- FSLC-S190E-W
- FSLC-S190N-W
- FSLD52TE-156.25M
- FSLD54TE-19.44M
- FSLF-080HR
- FSLF-190LB-K
- FSLF-S090JG
- FSLH-S080C
- FSLH-S100C
- FSLH-S150C
- FSLH-S200C
- FSLH-S240C
- FSLM220-2R2J=P2
- FSLM2520-100
- FSLM2520-100-J
- FSLM2520100JP2
- FSLM2520-101
- FSLM2520-101-J
- FSLM2520-120
- FSLM2520-120-J
