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CEB5175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB51A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,48A,RDS(ON)=16.5m?@VGS=10V. RDS(ON)=28m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,36A,RDS(ON)=48m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB540N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB550

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB550A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB6020P

Single P-Channel Enhancement Mode MOSFET

FEATURES ■-20V,-25.4A,RDS(ON)=55m?@VGS=-4.5V. RDS(ON)=155m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6026AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 65V,140A,RDS(ON)=3.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=4.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEB

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
CET/華瑞
23+
TO-263
122999
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
CET
24+
50000
詢價(jià)
CET
24+
TO-263
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
CET
22+
TO-263
17636
原裝正品現(xiàn)貨,可開(kāi)13點(diǎn)稅
 詢價(jià)
CET
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
ON/安森美
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多CEB供應(yīng)商 更新時(shí)間2025-4-17 10:02:00

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