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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEC010C	文件：177.95 Kbytes Page：1 Pages	Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights ?Smallsize ?Conformallyc	CDE Cornell Dubilier Electronics	CDE
CEC050C	文件：177.95 Kbytes Page：1 Pages	Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights ?Smallsize ?Conformallyc	CDE Cornell Dubilier Electronics	CDE
CEC100J	文件：177.95 Kbytes Page：1 Pages	Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights ?Smallsize ?Conformallyc	CDE Cornell Dubilier Electronics	CDE
CEC150J	文件：177.95 Kbytes Page：1 Pages	Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights ?Smallsize ?Conformallyc	CDE Cornell Dubilier Electronics	CDE
CEC16N10L	文件：807.31 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC2088E	文件：680.35 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V,36A,RDS(ON)=9mW@VGS=4.5V. RDS(ON)=12mW@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=16mW@VGS=1.8V. ESDProtected:2000V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC2108E	文件：607.9 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V,29A,RDS(ON)=13mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=19mW@VGS=2.5V. ESDProtected:2000V. RDS(ON)=27mW@VGS=1.8V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC220J	文件：177.95 Kbytes Page：1 Pages	Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights ?Smallsize ?Conformallyc	CDE Cornell Dubilier Electronics	CDE
CEC221J	文件：177.95 Kbytes Page：1 Pages	Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors EIAClass1TemperatureCompensatingCapacitors EIAClass1temperaturecompensatingcapacitorsareidealfortimingandoscillatingcircuits.Theyareconformallycoatedwithoneinchminimumradialleads.EIAClass1TemperatureCompensatingCapacitors Highlights ?Smallsize ?Conformallyc	CDE Cornell Dubilier Electronics	CDE
CEC2533	文件：770.06 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V,44A,RDS(ON)=8mW@VGS=10V. RDS(ON)=13mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC2609	文件：680.64 Kbytes Page：7 Pages	Dual Enhancement Mode Field Effect Transistor (N and P Channel) 20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC3062	文件：462.84 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,48A,RDS(ON)=6.7mW@VGS=10V. RDS(ON)=8.7mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC3115	文件：440.47 Kbytes Page：5 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-36A,RDS(ON)=12mW@VGS=-10V. RDS(ON)=16mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC3133	文件：748.28 Kbytes Page：5 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-30A,RDS(ON)=17mW@VGS=-10V. RDS(ON)=26mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC3257	文件：517.62 Kbytes Page：5 Pages	Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-17A,RDS(ON)=25mW@VGS=-10V. RDS(ON)=32mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC3633	文件：586.01 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,46A,RDS(ON)=7.2mW@VGS=10V. RDS(ON)=10mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC3833	文件：680.2 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,17A,RDS(ON)=5.0mW@VGS=10V. RDS(ON)=7.2mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC3P07A	文件：413.17 Kbytes Page：5 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-37A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC4112A	文件：666.56 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V,40A,RDS(ON)=10.2mW@VGS=10V. RDS(ON)=16mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEC5X	文件：2.21035 Mbytes Page：18 Pages	High Capacitance Stacked Capacitors FEATURES ?Multilayerchipsceramiccapacitors ?NPOdielectric ?Capacitancerange:10nFto6.8μF ?Voltagerange:63VDCto500VDC	EXXELIAExxelia Group EXXELIA集團(tuán)	EXXELIA

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型號：
CEC
制造商：
Mallory Sonalert Products Inc
功能描述：
Cap Ceramic 1pF 50V C0G 0.25pF(4 X 3mm) Radial 2.5mm 125°C

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市振宏微科技有限公司	CEC0110251-01	Vishay	23+	NA	3574	專做原裝正品,假一罰百!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	CEC04	CPLG	24+		1831		詢價(jià)
艾睿國際（香港）有限公司	CEC-102J	JAMECO	2021+	DIP	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	CEC-102KNP	高雅	23+	SMD	234000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種	詢價(jià)
深圳市匯萊威科技有限公司	CEC-102KNP	CECL	24+		68900	一站配齊原盒原包現(xiàn)貨朱S Q2355605126	詢價(jià)
深圳市河鋒鑫科技有限公司	CEC1302DC0SZ	Microchip	22+	144WFBGA	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	CEC1302DC0SZ	Microchip	21+	144WFBGA	13880	公司只售原裝,支持實(shí)單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	CEC1302DC0SZ	Microchip	23+	144WFBGA	9000	原裝正品，支持實(shí)單	詢價(jià)
深圳市芯巴巴科技有限公司	CEC1302DC0SZ	Microchip	23+		20000	全新、原裝、現(xiàn)貨	詢價(jià)
深圳市華睿芯科技有限公司	CEC1302D-C0-SZ	Microchip	23+	144WFBGA	10000	原廠原裝正品現(xiàn)貨	詢價(jià)

更多CEC供應(yīng)商更新時(shí)間2024-11-7 17:30:00

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