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CED6186A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,30.6A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,8A,RDS(ON)=26mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=26mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,8.1A,RDS(ON)=21mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,33A,RDS(ON)=23mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,33A,RDS(ON)=20mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,28A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,30.6A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=25mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6186

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,24A,RDS(ON)=24mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=30mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC6186A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,26A,RDS(ON)=20.5mW@VGS=10V. RDS(ON)=28mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA/東芝
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
C
TO-252
22+
6000
十年配單,只做原裝
 詢價(jià)
C
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET
23+
TO-251
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET
23+
TO-251
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET
25+
TO-251
1890
原裝正品,假一罰十!
 詢價(jià)
PHILIPS
24+
TSSOP
6618
公司現(xiàn)貨庫(kù)存,支持實(shí)單
 詢價(jià)
CET/華瑞
23+
TO-251 TO-252
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
CET
TO-251
50000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
更多CED6186A供應(yīng)商 更新時(shí)間2025-4-25 10:48:00

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