零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
CED75A3 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■25V,60A,RDS(ON)=9m?@VGS=10V. RDS(ON)=13m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
CED75A3 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-Channel Enhancement Mode Field Effect Transistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,69A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,69A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■25V,60A,RDS(ON)=9m?@VGS=10V. RDS(ON)=13m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE25VoltsCURRENT60Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOchenmko 力勤股份有限公司 | CHENMKO |
詳細參數(shù)
- 型號:
CED75A3
- 制造商:
CET
- 制造商全稱:
Chino-Excel Technology
- 功能描述:
N-Channel Enhancement Mode Field Effect Transistor
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SR |
23+ |
TO-251 |
6000 |
原裝正品,假一罰十 |
詢價 | ||
CET |
2020+ |
TO-251 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
CET |
23+ |
原廠原包 |
19960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
CET |
21+ |
TO-251 |
100 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
CET/華瑞 |
23+ |
TO-251 |
10000 |
公司只做原裝正品 |
詢價 | ||
CET/華瑞 |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CET/華瑞 |
2022+ |
TO-251 |
24090 |
原廠代理 終端免費提供樣品 |
詢價 | ||
C |
23+ |
TO-251 |
6000 |
原裝正品,支持實單 |
詢價 | ||
CET |
21+ |
TO-251 |
10 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
CET |
23+ |
TO-251 |
28000 |
原裝正品 |
詢價 |
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